THMY648071BEG

The THMY648071BEG is designed as one kind of 8,388,608 words by 64-bit sychronous dynamic RAM module consisting of four TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Features of the THMY648071BEG are:(1)single power supply of 3.3 V +/- 0.3 V;(2)pipeline architecture;(3)auto-refresh and self-refresh capability;(4)all inputs and outputs LVTTL-compatible;(5)4096 refresh cycle per 64 ms;(6)package: 168-pin DIMM (gold contacts);(7)based on Intel Rev. 1.0 (4-clock).

The absolute maximum ratings of the THMY648071BEG can be summarized as:(1)input voltage: -0.5 V to VDD+0.3 V;(2)output voltage: -0.5 V to VDD+0.3 V;(3)power supply voltage: -0.3 V to 4.6 V;(4)operating temperature: 0 to +70 ;(5)storage temperature: -55 to +125 ;(6)power dissipation: 2.8 W;(7)short-circuit output current: 50 mA. If you want to know more information about THMY648071BEG, please download the datasheet in www.seekic.com or www.chinaicmart.com .