Features: • +23 dBm at 44% Power Added Efficiency• Temperature stability better than 1dB• Power-control and Power-down modes• Single 3.3 V Supply Operation• Temperature Rating: -40C to +85C• 8 lead Exposed Pad MSOP8 Plastic PackageApplication• Bluetoothtm ...
THM1001TE: Features: • +23 dBm at 44% Power Added Efficiency• Temperature stability better than 1dB• Power-control and Power-down modes• Single 3.3 V Supply Operation• Temperature...
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Parameter |
Symbol |
Unit |
Min |
Max |
Supply Voltage |
Vcc |
V |
-0.3 |
+3.6 |
Control Voltage |
VCTL |
V |
-0.3 |
Vcc |
Ramping Voltage |
VRAMP |
V |
-0.3 |
Vcc |
IN |
RF Input Power |
dBm |
+8 | |
TA |
Operating Temperature Range |
-40 |
+85 | |
Tstg |
Storage Temperature Range |
-40 |
+150 | |
Tj |
Maximum Junction Temperature |
+150 |
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier output and antenna.
The silicon-germanium structure of the THM1001TE, and its exposed-die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature.