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THAT140

Features: Two Matched NPN Transistors Two Matched PNP Transistors Monolithic Construction Low Noise - 0.75 nV/Hz (PNP) - 0.8nV/Hz (NPN) High Speed - ft= 350 MHz (NPN) - ft= 325 MHz (PNP) Excellent Matching - 500 V typ Dielectrically Isolated25 V VCEOApplication Microphone Preamplifiers Tape Head ...

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THAT140: Features: Two Matched NPN Transistors Two Matched PNP Transistors Monolithic Construction Low Noise - 0.75 nV/Hz (PNP) - 0.8nV/Hz (NPN) High Speed - ft= 350 MHz (NPN) - ft= 325 MHz (PNP) Excellent ...

THAT140 Data Sheet

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Part Number:
THAT140
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

Two Matched NPN Transistors
    Two Matched PNP Transistors
Monolithic Construction
Low Noise
    - 0.75 nV/Hz (PNP)
    - 0.8nV/ Hz (NPN)
High Speed
    - ft= 350 MHz (NPN)
    - ft= 325 MHz (PNP)
Excellent Matching - 500 V typ
Dielectrically Isolated
 25 V VCEO


Application

Microphone Preamplifiers
Tape Head Preamplifiers
Current Sources
Current Mirrors
Log/Antilog Amplifiers
 Multipliers


Specifications

Parameter
Symbo
Conditions
Min
Typ
Max
Units
NPN Collector-Emitter Voltage
BVCEO
IC = 1 mAdc, IB = 0
25
35
-
V
NPN Collector-Base Voltage
BVCBO
IC = 10Adc, IE = 0
25
35
-
V
NPN Emitter-Base Voltage
BVEBO
IE = 10Adc, IC = 0
5
-
-
V
NPN Collector Current
IC
10
20
mA
NPN Emitter Current
IE
10
20
mA
PNP Collector-Emitter Voltage
BVCEO
IC = 1 mAdc, IB = 0
-25
-40
-
V
PNP Collector-Base Voltage
BVCBO
IC = 10Adc, IE = 0
-25
-40
-
V
PNP Emitter-Base Voltage
BVEBO
IE = 10Adc, IC = 0
-5
-
-
V
PNP Collector Current
IC
-10
-20
mA
PNP Emitter Current
IE
-10
-20
mA
Collector-Collector Voltage
BVCC
±100
±200
-
V
Emitter-Emitter Voltage
BVEE
±100
±200
-
V
Operating Temperature Range
TA
0
70
°C
Maximum Junction Temperature
TJMAX
150
°C
Storage Temperature
TSTORE
-45
125
°C



Description

THAT140 is a quad, large-geometry monolithic NPN/PNP transistor array which combines low noise, high speed and excellent parametric matching. The large geometries THAT140 typically result in 25 base spreading resistance for the PNP devices (30 for the NPNs), producing 0.75 nV/ Hz voltage noise (0.8 nV/Hz for the NPNs). This makes these parts an ideal choice for low-noise amplifier input stages.

Fabricated on a Complementary Bipolar Dielectrically Isolated process, all four transistors are electrically isolated from each other by a layer of oxide.

The resulting low collector-to-substrate capacitance THAT140 produces a typical NPN ft of 350 MHz, 325 Mhz for the PNPs. This delivers AC performance similar to discrete 2N3904- and 2N3906-class devices.Dielectric isolation also minimizes crosstalk and provides complete DC isolation.

Substrate biasing is not required for normal operation, though the substrate should be grounded to optimize speed. The monolithic construction assures excellent parameter matching and tracking over temperature.




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