TH416

Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A PDISS Power Dissipation 175 W TJ Junction Temperature +200 °C TSTG Storage Tempera...

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SeekIC No. : 004518532 Detail

TH416: Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A...

floor Price/Ceiling Price

Part Number:
TH416
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 35 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 12 A
PDISS Power Dissipation 175 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.




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