Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A PDISS Power Dissipation 175 W TJ Junction Temperature +200 °C TSTG Storage Tempera...
TH416: Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 70 | V |
VCEO | Collector-Emitter Voltage | 35 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 12 | A |
PDISS | Power Dissipation | 175 | W |
TJ | Junction Temperature | +200 | °C |
TSTG | Storage Temperature | - 65 to +150 | °C |
The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.