TGS2306-EPU

Features:

• DC - 18 GHz Frequency Range
• 29 dBm Input P1dB @ V_C = -5V
• > 30 dB Isolation
• <1 nsec switching speed
• Control Voltage Application from Either Side of MMIC
• -3V or -5V Control Voltage
• 0.5m pHEMT 3MI Technology
• Chip Dimensions:
   0.83 x 1.11 x 0.10 mm
   (0.033 x 0.044 x 0.004 inches)


Specifications

Symbol	Parameter	Value	Notes
VC	Control Voltage	-7 V	1/ 2/
IC	Control Current	2.25 mA	1/ 2/
PIN	Input Continuous Wave Power	TBD	1/ 2/
PD	Power Dissipation	TBD	1/ 2/ 3/
TCH	Operating Channel Temperature	150	4/
TM	Mounting Temperature (30 Seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70
3/ When operated at this bias condition with a baseplate temperature of 70, the MTTF is reduced to 1.0E+6 hours
4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.


Description

The TriQuint TGS2306-EPU is a GaAs single-pole, double-throw (SPDT) FET monolithic switch designed to operate over the DC to 18GHz frequency range.

This switch not only maintains a high isolation loss and a low insertion loss  across a wide bandwidth, but also has very low power consumption and high power handling of 29dBm or greater input P1dB at V_C = 5V. These advantages, along with the small size of  the chip, make the TGS2306-EPU ideal for use in high-speed radar and communication applications.