TGP6336-EEU

Features: • 6 to 18 GHz Frequency Range• 5-Bit Phase Shifter• On-Chip CMOS-Compatible Drivers• 9 dB Typical Insertion Loss at Midband• 2:1 Typical Input SWR: 2.6:1 Typical Output SWR• 3.556 x 2.540 x 0.1016 mm (0.140 x 0.100 x 0.004 in.)SpecificationsPositive su...

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SeekIC No. : 004518486 Detail

TGP6336-EEU: Features: • 6 to 18 GHz Frequency Range• 5-Bit Phase Shifter• On-Chip CMOS-Compatible Drivers• 9 dB Typical Insertion Loss at Midband• 2:1 Typical Input SWR: 2.6:1 Typi...

floor Price/Ceiling Price

Part Number:
TGP6336-EEU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

• 6 to 18 GHz Frequency Range
• 5-Bit Phase Shifter
• On-Chip CMOS-Compatible Drivers
• 9 dB Typical Insertion Loss at Midband
• 2:1 Typical Input SWR: 2.6:1 Typical Output SWR
• 3.556 x 2.540 x 0.1016 mm (0.140 x 0.100 x 0.004 in.)




Specifications

Positive supply voltage, V+.................................        8 V
Positive supply voltage range w ith respect to negative supply voltage, V+ - V-... 0 V to 12 V
Negative supply voltage range, V-........................... 0 V to -6 V
Input continuous w ave pow er, PIN.............................   1 W
Control voltage range, SHF 90, SHF180, SHF11.25, SHF 22.5, SHF 45..........0 V to V+
Operating Channel temperature, TCH *...........................150oC
Mounting temperature (30 sec.), TM............................320oC
Storage temperature range, TSTG......................... -65 to 150oC




Description

The TriQuint TGP6336-EEU is a GaAs MMIC 5-bit phase shifter which operates from 6 to 18 GHz. Phase can be shifted from 0 to 348.75 degrees in 11.25 degree steps. Control bias voltages are 0 and 5 V. The insertion loss is typically 9 dB.

The TGP6336-EEU features on-chip CMOS-compatible drivers. The FET based phase shifter offers wide band performance and small size for use in T/R modules for EW applications.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. Ground is provided to the circuitry through vias to the backside metallization.




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