TGF4350-EPU Selling Leads, Price trend, TGF4350-EPU DataSheet download, circuit diagram from SeekIC.com

Features: • 0.25um pHEMT Technology• DC 22 GHz Frequency Range• 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation• Floating Source Configuration• Chip Dimensions 0.5080 mm x 0.4064 mmSpecifications Symbol Parameter Value Notes V+ Positive Supply...

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SeekIC No. : 004518424 Detail

TGF4350-EPU: Features: • 0.25um pHEMT Technology• DC 22 GHz Frequency Range• 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation• Floating Source Configuration• Chip Dimensio...

TGF4350-EPU Data Sheet

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Part Number:: TGF4350-EPU
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/1/12

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Recent History
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Product Details

Description

Features:

• 0.25um pHEMT Technology
• DC 22 GHz Frequency Range
• 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation
• Floating Source Configuration
• Chip Dimensions 0.5080 mm x 0.4064 mm

Specifications

Symbol	Parameter	Value	Notes
V⁺	Positive Supply Voltage	7 V
I⁺	Positive Supply Current	.085A	3/
P^_D	Power Dissipation	0.6 W
P_IN	Input Continuous Wave Power	20 dBm
T_CH	Operating Channel Temperature	150 °C	1/, 2/
T_M	Mounting Temperature (30 seconds)	320 °C
T_STG	Storage Temperature	-65 °C to 150 °C

1/ These ratings apply to individual FET

2/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels.

3/ Nominal value of Idss

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TGF4350-EPU

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