TGF4250-SCC

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Drain Source Voltage VDS : 12 V
Frequency : 10.5 GHz
Gate-Source Breakdown Voltage : - 22 V
Package / Case : 12-Pin-Die
Gain : 8.5 dB at 8.5 GHz
Forward Transconductance gFS (Max / Min) : 792 mS
Continuous Drain Current : 1.17 A


Features:

• Nominal Pout of 34 dBm at 8.5 GHz
• Nominal Gain of 8.5 dB at 8.5 GHz
• Nominal PAE of 53% at 8.5 GHz
• Suitable for high reliability applications
• 4800 m x 0.5 m FET
• Chip dimensions: 0.61 x 1.37 x 0.1 mm
  (0.024 x 0.054 x 0.004 in)
• Bias at 8 Volts, 384 mA


Application

• Cellular Base Stations
• High-reliability space
• Military


Specifications

Symbol	Parameter 1/	Value	Notes
VDS	Drain to Source Voltage	12V
VGS	Gate to Source Voltage Range	0 to -5.0 Volts
PD	Power Dissipation	See Thermal Data
TCH	Operating Channel Temperature	150	2/,3/
TM	Mounting Temperature (30 seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum values for this device. Stresses beyond those listed under "Maximum  atings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the  evice at these or any other conditions beyond those indicated under "DC Probe Characteristics" and "Electrical  haracteristics" is not implied. Exposure to maximum rated conditions for extended periods may affect device  eliability.
2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is  ecommended that junction temperatures be maintained at the lowest possible levels.
3/ These ratings apply to each individual FET.


Description

The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53% PAE.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment.

For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Parameters:

Technical/Catalog Information	TGF4250-SCC
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF4250 SCC TGF4250SCC