SpecificationsDrain - to- source voltage, VDS ....................................................................................12 VGate - to- source voltage, VGS ...........................................................................-5 V to 0 VMounting temperatur e (30 sec), TM ...............
TGF4250-EEU: SpecificationsDrain - to- source voltage, VDS ....................................................................................12 VGate - to- source voltage, VGS ....................................
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Drain - to- source voltage, VDS ....................................................................................12 V
Gate - to- source voltage, VGS ...........................................................................-5 V to 0 V
Mounting temperatur e (30 sec), TM ....................................................................... 320°C
Storage temperature range, TSTG ................................................................- 65 to 200°C
Power dissipation, PD ......................................................(see thermal data on next page)
Operating channel temperature, TCH ..............................(see thermal data on next page)
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field
Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.
Bond pad and backside metalization is gold plated for compat ibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4250-EEU is readily assembled using automatic equipment.