TGF4250-EEU

SpecificationsDrain - to- source voltage, VDS ....................................................................................12 VGate - to- source voltage, VGS ...........................................................................-5 V to 0 VMounting temperatur e (30 sec), TM ...............

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SeekIC No. : 004518422 Detail

TGF4250-EEU: SpecificationsDrain - to- source voltage, VDS ....................................................................................12 VGate - to- source voltage, VGS ....................................

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Part Number:
TGF4250-EEU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Specifications

Drain - to- source voltage, VDS ....................................................................................12 V
Gate - to- source voltage, VGS ...........................................................................-5 V to 0 V
Mounting temperatur e (30 sec), TM ....................................................................... 320°C
Storage temperature range, TSTG ................................................................- 65 to 200°C
Power dissipation, PD ......................................................(see thermal data on next page)
Operating channel temperature, TCH ..............................(see thermal data on next page)




Description

 

The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field

Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.

Bond pad and backside metalization is gold plated for compat ibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4250-EEU is readily assembled using automatic equipment.




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