TGF4230-EEU

Drain - to- source Voltage, V_DS. ..........................................................................................12 V
Gate - to- source Voltage, V_GS .................................................................................- 5 V to 0 V
Mounting temperatur e (30 sec), T_M .............................................................................. 320°C
Storage temperature range, T_STG ............................................................ ..........- 65 to 200°C
Power dissipation, P_D ............................................................. (see thermal data on next page)
Operating channel temperature, T_CH ......................................(see thermal data on next page)

The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation.

Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is readily assembled using automatic equipment.