Transistors RF GaAs DC-5.0GHz 0.5 Watt HFET
TGF2960-SD-T/R: Transistors RF GaAs DC-5.0GHz 0.5 Watt HFET
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Technology Type : | HEMT | Frequency : | 5 GHz |
Gain : | 15 db at 2.1 GHz | Noise Figure : | 4.3 dB |
Drain Source Voltage VDS : | 8 V | Gate-Source Breakdown Voltage : | - 1 V |
Continuous Drain Current : | 130 mA | Maximum Operating Temperature : | + 175 C |
Power Dissipation : | 1.37 W | Mounting Style : | SMD/SMT |
Package / Case : | SOT89 |
Technical/Catalog Information | TGF2960-SD-T/R |
Vendor | Triquint Semiconductor Inc (VA) |
Category | Undefined Category |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TGF2960 SD T R TGF2960SDTR 779 1014 1 ND 77910141ND 779-1014-1 |