Transistors RF GaAs 5.0mm GaN Discrete
TGF2023-05: Transistors RF GaAs 5.0mm GaN Discrete
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Technology Type : | HEMT | Frequency : | 18 GHz |
Gain : | 15 dB | Drain Source Voltage VDS : | 40 V |
Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 1.5 A |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | 5-Pin-Die |