TGF2022-60

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Gain : 12 dB
Frequency : 18 GHz
Drain Source Voltage VDS : 12 V
Gate-Source Breakdown Voltage : - 14 V
Package / Case : 18-Pin-Die
Forward Transconductance gFS (Max / Min) : 2.25 S
Continuous Drain Current : 1.8 A


Features:

• Frequency Range: DC - 20 GHz
• > 38 dBm Nominal Psat
• 57% Maximum PAE
• 12 dB Nominal Power Gain
• Suitable for high reliability applications
• 6.0mm x 0.35um Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 448-752mA
   (Under RF Drive, Id rises from 448mA to 1480mA)
• Chip Dimensions: 0.57 x 2.93 x 0.10 mm
   (0.022 x 0.115 x 0.004 in)


Application

• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applicati


Specifications

Symbol	Parameter 1/	Value	Notes
V+	Positive Supply Voltage	12.5V	2/
V-	Negative Supply Voltage Range	-5V to 0V
I+	CPositive Supply Current	282mA	2/
| IG |	Gate Supply Current	70mA
PD	Power Dissipation	See note 3	2/
PIN	Input Continuous Wave Power	33 dBm	2/ 3/
TCH	Operating Channel Temperature	150	4/
TM	Mounting Temperature (30 seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P_D(max) = (150 °C TBASE °C) / 14.2 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure (T_M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.


Description

The TriQuint TGF2022-60 is a discrete 6.0 mm pHEMT which operates from DC-20 GHz. The TGF2022-60 is designed using TriQuint's proven standard 0.35um power pHEMT production process.

The TGF2022-60 typically provides > 38 dBm of saturated output power with power gain of 12 dB. The The maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications.

The TGF2022-60 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.

The TGF2022-60 has a protective surface passivation layer providing environmental robustness.

Lead-free and RoHS compliant.

Parameters:

Technical/Catalog Information	TGF2022-60
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF2022 60 TGF202260