TGF2022-48

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Frequency : 18 GHz
Gain : 8 dB
Drain Source Voltage VDS : 12 V
Gate-Source Breakdown Voltage : - 14 V
Package / Case : 18-Pin-Die
Forward Transconductance gFS (Max / Min) : 1.8 S
Continuous Drain Current : 1.4 A


Features:

• Frequency Range: DC - 20 GHz
• > 37 dBm Nominal Psat
• 58% Maximum PAE
• 45 dBm Nominal OIP3
• 13 dB Nominal Power Gain
• Suitable for high reliability applications
• 4.8mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 360-600mA (Under RF Drive, Id rises from 360mA to 1200mA)
• Chip Dimensions: 0.57 x 2.42 x 0.10 mm (0.022 x 0.095 x 0.004 in)


Application

• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications


Description

The TriQuint TGF2022-48 is a discrete 4.8 mm pHEMT which operates from DC-20 GHz. The TGF2022-48 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2022-48 typically provides > 37 dBm of saturated output power with power gain of 13 dB.

The maximum power added efficiency is 58% which makes the TGF2022-48 appropriate for high efficiency applications. The TGF2022-48 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.

The TGF2022-48 has a protective surface passivation layer providing environmental robustness.

Lead-free and RoHS compliant

Parameters:

Technical/Catalog Information	TGF2022-48
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF2022 48 TGF202248