TGF2022-12

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Frequency : 18 GHz
Gain : 8 dB
Forward Transconductance gFS (Max / Min) : 450 mS
Drain Source Voltage VDS : 12 V
Gate-Source Breakdown Voltage : - 14 V
Continuous Drain Current : 360 mA
Package / Case : 4-Pin-Die


Features:

• Frequency Range: DC - 20 GHz
• > 31 dBm Nominal Psat
• 58% Maximum PAE
• 39 dBm Nominal OIP3
• 13 dB Nominal Power Gain
• Suitable for high reliability applications
• 1.2mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 90-150mA(Under RF Drive, Id rises from 90mA to 300mA)
• Chip Dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in)


Application

• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications


Pinout




Specifications

Symbol	Parameter 1/	Value	Notes
V+	PositiveSupply Voltage	12.5 V	2/
V-	Negative Supply Voltage Range	-5V to 0V
I+	Positive Supply Current	564 mA	2/
|IG|	Gate Supply Current	14 mA
PIN	Input Continuous Wave Power	26 dBm	2/
PD	Power Dissipation	See note 3	2/ 3/
TCH	Operating Channel Temperature	150	4/
TM	Mounting Temperature (30 Seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:PD(max) = (150 °C TBASE °C) / 69.0 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.


Description

The TriQuint TGF2022-12 is a discrete1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint's proven standard 0.35um power pHEMT production process.
The TGF2022-12 typically provides > 31 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications.
The TGF2022-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.The TGF2022-12 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant

Parameters:

Technical/Catalog Information	TGF2022-12
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF2022 12 TGF202212