TGF2021-08

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Frequency : 12 GHz
Gain : 11 dB
Drain Source Voltage VDS : 12 V
Gate-Source Breakdown Voltage : - 14 V
Forward Transconductance gFS (Max / Min) : 3 S
Continuous Drain Current : 2.4 A
Package / Case : 18-Pin-Die


Features:

• Frequency Range: DC - 12 GHz
• > 39 dBm Nominal Psat
• 59% Maximum PAE
• 11 dB Nominal Power Gain
• Suitable for high reliability applications
• 8mm x 0.35m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 600-1000mA
   (Under RF Drive, Id rises from 600mA to 1920mA)
• Chip Dimensions: 0.57 x 2.42 x 0.10 mm
   (0.022 x 0.095 x 0.004 in)

Application

• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications


Specifications

Symbol	Parameter 1/	Value	Notes
V+	Positive Supply Voltage	12.5V	2/
V-	Negative Supply Voltage Range	-5V to 0V
I+	CPositive Supply Current	3.8mA	2/
| IG |	Gate Supply Current	56mA
PD	Power Dissipation	See note 3	2/
PIN	Input Continuous Wave Power	34 dBm	2/ 3/
TCH	Operating Channel Temperature	150	4/
TM	Mounting Temperature (30 seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P_D(max) = (150 °C TBASE °C) / 10.8 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure (T_M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.


Description

The TriQuint TGF2021-08 is a discrete 8mm pHEMT which operates from DC-12 GHz. The TGF2021-08 is designed using TriQuint's proven standard 0.35um power pHEMT production process.

The TGF2021-08 typically provides > 39 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-08 appropriate for high efficiency applications.

The TGF2021-08 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.

The TGF2021-08 has a protective surface passivation layer providing environmental robustness.

Lead-free and RoHS compliant.

Parameters:

Technical/Catalog Information	TGF2021-08
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Transistor Type	pHEMT FET
Voltage - Rated	12V
Current Rating	1A
Package / Case	*
Packaging	Tray
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF2021 08 TGF202108