TGF1350-SCC

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Continuous Drain Current : 100 mA
Technology Type : HEMT
Gate-Source Breakdown Voltage : - 6 V
Frequency : 18 GHz
Drain Source Voltage VDS : 8 V
Gain : 7 dB
Noise Figure : 2.5 dB
Forward Transconductance gFS (Max / Min) : 6 mS
Power Dissipation : 700 mW
Package / Case : SMD/SMT


Features:

• 0.5 um x 300 um FET
• 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz
• 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz
• All-gold Metallization for High Reliability
• Recessed Gate Structure

Description

The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire-bonding processes.

The TGF1350-SCC is readily assembled using automated equipment. Die attach should be accomplished with conductive epoxy only. Eutectic attach is not recommended .

Parameters:

Technical/Catalog Information	TGF1350-SCC
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF1350 SCC TGF1350SCC