Features: • 0.25um pHEMT Technology• 0.3-10 GHz RF/LO Frequency Range• 0.15-2.5 GHz IF Frequency Range• Nominal Conversion Gain of 12 dB• Bias 3-5V @ 26 mA• Chip Dimensions 1.8 mm x 2.6mmSpecifications Symbol Parameter Value Unit V+ Positive Supply...
TGC1411-EPU: Features: • 0.25um pHEMT Technology• 0.3-10 GHz RF/LO Frequency Range• 0.15-2.5 GHz IF Frequency Range• Nominal Conversion Gain of 12 dB• Bias 3-5V @ 26 mA• Chip ...
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• 0.25um pHEMT Technology
• 0.3-10 GHz RF/LO Frequency Range
• 0.15-2.5 GHz IF Frequency Range
• Nominal Conversion Gain of 12 dB
• Bias 3-5V @ 26 mA
• Chip Dimensions 1.8 mm x 2.6mm
Symbol | Parameter | Value | Unit |
V+ | Positive Supply Voltage | 8 V | |
I+ | Positive Supply Current | 80 mA | 3/ |
PD | Power Dissipation | 0.64 W | |
PIN | Input Continuous Wave Power | 14 dBm | |
TCH | Operating Channel Temperature | 150 °C | 1/, 2/ |
TM | Mounting Temperature (30 seconds) | 320 °C | |
TSTG | Storage Temperature | -65 °C to 150 °C |
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels.
3/ Total current for the entire MMIC