SpecificationsDrain supply voltage, VD ................................................................................. 10 VNegative supply voltage range, VG ........................................................ - 5 V to 0 VDrain supply current, ID ................................................
TGA9083-EEU: SpecificationsDrain supply voltage, VD ................................................................................. 10 VNegative supply voltage range, VG ..........................................
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Features: • 0.25um pHEMT Technology• 17-21GHz Frequency Range• 22 dBm @ P2dB Nom...
The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage poweramplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. TheTGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40percent. Typical small signal gain is 19-dB. In balanced configuration, 12 Watts of output power isachievable with 40% PAE.
The TGA9083-EEU is fabricated using TI's 0.25um T-gate power pHEMT process. This device offer seither standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . Theactive gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiencyover 6.5 to 11.5 GHz make it a viable power amp solution in applications such as point-to-point radio ,phased-array radar, and telecommunications.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachmentmethods as well as with thermocompression and thermosonic wire-bonding processes.The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.Ground is provided to the circuitr y through vias to the backside metallization.