TGA6316-EEU

The TriQuint TGA6316-EEU is a dual channel GaAs monolithic amplifier whichoperates from 6 to 17-GHz. Each channel features three-stage topology with a
1200-mm dual-gate FET distributed amplifier for the first stage, a 1200 m singlegate FET second stage, and a 1900 m single gate FET third stage. The dualchannelconstruction is designed for off-chip combining.

A single channel of the TGA6316-EEU provides 20.5-dB typical small signal gainand 29.5 dBm output power at 3 dB gain compression. The TGA6316-EEU amplifieris designed for use in wideband systems such as electronic warfare,expendable decoys and test equipment.

Bond pad and backside metallization is gold plated for compatibility with eutecticalloy attachment methods as well as the thermocompression and thermosonic wirebonding processes. Ground is provided to the circuitry through vias to the backsidemetallization.