Features: • Frequency Range: 26 - 31 GHz• 38 dBm Typical Psat @ Pin =21 dBm• 22 dB Nominal Gain• 15 dB Typical Return Loss• 0.25m pHEMT Technology• Bias Conditions: Vd = 6V, Idq = 4.2 A• Package Dimensions: 0.526 x 0.650 x 0.073 inApplication• Satell...
TGA4915-EPU-CP: Features: • Frequency Range: 26 - 31 GHz• 38 dBm Typical Psat @ Pin =21 dBm• 22 dB Nominal Gain• 15 dB Typical Return Loss• 0.25m pHEMT Technology• Bias Condition...
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Symbol | Parameter 1/ | Value | Notes |
V+ | Positive Supply Voltage | 8 V | 2/ |
V- | Negative Supply Voltage Range | -3V TO 0V | |
I+ | Positive Supply Current (Quiescent) | 8 A | 2/ |
| IG | | Gate Supply Current | 124 mA | |
PIN | Input Continuous Wave Power | 27 dBm | 2/ |
PD | Power Dissipation | 34 W | 2/, 3/ |
TCH | Operating Channel Temperature | 150 | 4/, 5/ |
TM | Mounting Temperature (30 Seconds) | 210 | |
TSTG | Storage Temperature | -65 to 150 |
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ PD is the power dissipation allowed in order to reach a channel temperature of 150 with a package base temperature of 70. When operated at this power dissipation with a baseplate temperature of 70, the MTTF is 1.0E+6 hours.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
The TriQuint TGA4915-EPU-CP is a compact 7 Watt High Power Amplifier for Ka band applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process.
The TGA4915 provides a nominal 38 dBm of output power at an input power level of 21 dBm with a small signal gain of 22 dB.
The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio.