Features: ·34.8 dBm Midband Psat·24 dB Nominal Gain·8 dB Typical Input Return Loss·12 dB Typical Output Return Loss·25 - 31 GHz Frequency Range·0.25|ìm pHEMT Technolog·Bias Conditions: 6V, 2.2A·Package Dimensions:13.34 × 9.65 × 1.85 mm (0.525 × 0.380 × 0.073 in)Application·Satellite Ground Termina...
TGA4901-EPU-CP: Features: ·34.8 dBm Midband Psat·24 dB Nominal Gain·8 dB Typical Input Return Loss·12 dB Typical Output Return Loss·25 - 31 GHz Frequency Range·0.25|ìm pHEMT Technolog·Bias Conditions: 6V, 2.2A·Pack...
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SYMBOL |
PARAMETER1/ |
VALUE |
NOTES |
VD |
Drain Voltage |
8V |
2/ |
VG |
Gate Voltage Range |
5V to+0V |
|
ID |
Drain Current |
3.0 mA |
2/2/ |
|IG| |
Gate Current |
62 mA |
|
PIN |
Input Continuous Wave Power |
24 dBm |
2/ |
PD |
Power Dissipation |
16.8W |
2/3/ |
TCH |
Operating Channel Temperature |
150 |
4/5/ |
TM |
Mounting Temperature (30 Seconds) |
320 |
|
TSTG |
Storage Temperature |
-65 to 150 |
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed PD
PD is the power dissipation allowed in order to reach a channel temperature of 150 with a package base temperature of 70. When operated at this power dissipation with a baseplate temperature of 70, the MTTF is reduced from 5.3E+6 to 1.0E+6 hours.
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to ailure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.