Features: • 3200 Single-Ended Transimpedance• > 9 GHz 3dB Bandwidth• > 1.6mA RMS Input Overload Current• 11pA/ Hz Input Noise Current• Rx Signal Indicator (RSSI)• 0.15m 3MI pHEMT Technology• Bias Conditions: 3.3V, 70mA• Chip dimensions: 1.20 x ...
TGA4817-EPU: Features: • 3200 Single-Ended Transimpedance• > 9 GHz 3dB Bandwidth• > 1.6mA RMS Input Overload Current• 11pA/ Hz Input Noise Current• Rx Signal Indicator (RSSI)&...
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SYMBOL | PARAMETER 1/ | VALUE | NOTES |
V+ | Positive Supply Voltage | 5.5 V | 2/ |
I+ | Positive Supply Current (Quiescent) | 80 mA | 2/ |
PIN | VInput Continuous Wave Power | 14.5 dBm | 2/ |
PD | Power Dissipation | 0.44 W | 2/ |
TCH | Operating Channel Temperature | 117 | 4/ 5/ |
TM | Mounting Temperature (30 Seconds) |
320 | |
TSTG | Storage Temperature | -65 to 117 |
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage,supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is 1 E+6 hours.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (TM).
For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.