TGA4514-EPU

Features: • Typical Frequency Range: 31 - 35 GHz• 33.5 dBm Nominal Psat @ Vd = 7V• 31.5 dBm Nominal P1dB• IMD3: 31dBc at Pout/tone=22dBm• 19 dB Nominal Gain• Bias 6 - 7 V, 1150 mA• 0.25 um 2MI pHEMT Technology• Chip Dimensions 4.0 x 3.2 x 0.1 mm (0.1...

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SeekIC No. : 004518375 Detail

TGA4514-EPU: Features: • Typical Frequency Range: 31 - 35 GHz• 33.5 dBm Nominal Psat @ Vd = 7V• 31.5 dBm Nominal P1dB• IMD3: 31dBc at Pout/tone=22dBm• 19 dB Nominal Gain• Bias...

floor Price/Ceiling Price

Part Number:
TGA4514-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

• Typical Frequency Range: 31 - 35 GHz
• 33.5 dBm Nominal Psat @ Vd = 7V
• 31.5 dBm Nominal P1dB
• IMD3: 31dBc at Pout/tone=22dBm
• 19 dB Nominal Gain
• Bias 6 - 7 V, 1150 mA
• 0.25 um 2MI pHEMT Technology
• Chip Dimensions 4.0 x 3.2 x 0.1 mm
   (0.161 x 0.128 x 0.004) in



Application

• Point-to-Point Radio
• Military Radar Systems
• Ka Band Sat-Com



Specifications

Symbol Parameter 5/ Value Notes  
Vd Drain Voltage 8 V 2/  
Vg Gate Voltage Range -5 V to 0 V    
Id Drain Current 2.5 A 2/  
| IG | Gate Supply Current 70 mA 3/  
PIN Input Continuous Wave Power 27 dBm    
PD Power Dissipation TBD 2/ 4/  
TCH Operating Channel Temperature 150 5/ 6/  
TM Mounting Temperature (30 Seconds) 320    
TSTG Storage Tempe -65 to 150    
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
   maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings apply to each individual FET.



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