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TGA4510-EPU

Features: • 0.25 um pHEMT Technology• >16 dB Nominal Gain @ 30 GHz• 16 dBm Nominal Psat• Bias Conditions: Vd = 6V, Id = 60 mA• Compact Chip Size: 1.1 x 0.8 x 0.1 mm3Application• LMDS• Point-to-Point• Base StationsSpecifications Symbol Parame...

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SeekIC No. : 004518372 Detail

TGA4510-EPU: Features: • 0.25 um pHEMT Technology• >16 dB Nominal Gain @ 30 GHz• 16 dBm Nominal Psat• Bias Conditions: Vd = 6V, Id = 60 mA• Compact Chip Size: 1.1 x 0.8 x 0.1 mm3...

TGA4510-EPU Data Sheet

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Part Number:
TGA4510-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.25 um pHEMT Technology
• >16 dB Nominal Gain @ 30 GHz
• 16 dBm Nominal Psat
• Bias Conditions: Vd = 6V, Id = 60 mA
• Compact Chip Size: 1.1 x 0.8 x 0.1 mm3


Application

• LMDS
• Point-to-Point
• Base Stations


Specifications

Symbol Parameter Value Notes
V+ Positive Supply Voltage 8 V 2/
I+ Positive Supply Current 81 mA 2/
| Ig | Gate Supply Current 3.5 mA  
PIN Input Continuous Wave Power 18 dBm
PD Power Dissipation TBD
TCH Operating Channel Temperature 150 °C 3/ 4/
TM Mounting Temperature
(30 Seconds)		 320 °C  
TSTG Storage Temperature -65 to 150°C  

1/ These values represent the maximum operable values of this device
2/ Total current for the entire MMIC
3/ These ratings apply to each individual FET
4/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels.




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