Features: • 22 dB Nominal Gain @ 30 GHz• 30 dBm Nominal Pout @ P1dB• 25% PAE @ P1dB• -10 dB Nominal Return Loss• Built-in Power Detector• 0.25-m mmW pHEMT 3MI• Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA• Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm(0....
TGA4509-EPU: Features: • 22 dB Nominal Gain @ 30 GHz• 30 dBm Nominal Pout @ P1dB• 25% PAE @ P1dB• -10 dB Nominal Return Loss• Built-in Power Detector• 0.25-m mmW pHEMT 3MIR...
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Symbol | Parameter | Value | Notes |
V+ | Positive Supply Voltage | 7 V | |
V- | Negative Supply Voltage Range | -5 V to 0 V | |
|Ig| | Gate Supply Current | 35.2 mA | |
I+ | Positive Supply Current | 930 mA | 2/, 5/ |
PD | Power Dissipation | TBD | |
PIN | Input Continuous Wave Power | 22 dBm | |
TCH | Operating Channel Temperature | 150 | 3/, 4/ |
TM | Mounting Temperature (30 Seconds) | 320 | |
TSTG | Storage Temperature | -65 to 150 |