RF Amplifier 30-42 GHz LNA
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SYMBOL | PARAMETER | VALUE | NOTES |
V+ | Positive Supply Voltage | 5 V | 2/ |
Vg1 | Gate 1 Supply Voltage Range | -1 V TO 0 V | |
I+ | Positive Supply Current | 190 mA | 2/ |
| IG | | Gate Supply Current | 6 mA | |
PIN | Input Continuous Wave Power | 12 dBm | 2/ |
PD | Power Dissipation | 0.37 W | 2/3/ |
TCH | Operating Channel Temperature | 117 | 4/, 5/ |
TM | Mounting Temperature (30 Seconds) | 320 | |
TSTG | Storage Temperature | -65 to 117 |
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
5/ These ratings apply to each individual FET.
Technical/Catalog Information | TGA4508 |
Vendor | Triquint Semiconductor Inc |
Category | RF and RFID |
Function | Amplifier |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TGA4508 TGA4508 |