Features: • 0.25 um pHEMT Technology• 23 dB Nominal Gain• 34.5 dBm Nominal P1dB• 40 dBm IMD3 Typical• Bias 6 V @ 2.1 AApplication• Satellite Ground Terminal• Point-to-Point RadioSpecifications Symbol Parameter Value Notes V+ Positive Supply Vol...
TGA4501-SCC: Features: • 0.25 um pHEMT Technology• 23 dB Nominal Gain• 34.5 dBm Nominal P1dB• 40 dBm IMD3 Typical• Bias 6 V @ 2.1 AApplication• Satellite Ground Terminal•...
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Symbol | Parameter | Value | Notes |
V+ | Positive Supply Voltage | 8 V | 4/ |
V- | Negative Supply Voltage Range | -5V TO 0V | |
I+ | Positive Supply Current(Quiescent) | 3.0 A | 4/ |
| Ig | | Gate Supply Current | 62 mA | |
PIN | Input Continuous Wave Power | 24 dBm | |
PD | Power Dissipation | 18.4 W | 3/ 4/ |
TCH | Operating Channel Temperature | 150 | 1/ 2/ |
TM | Mounting Temperature (30 Seconds) |
320 | |
TSTG | Storage Temperature | -65 to 150 |
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM).For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 7.4 E+6 to 4.6 E+5 hours.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.
The TriQuint TGA4501-SCC is a compact 3 Watt High Power Amplifier MMIC for Ka-band applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process.
The TGA4501 provides a nominal 34.5 dBm of output power at 1 dB gain compression from 24-31 GHz with a small signal gain of 23 dB.
The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and LMDS.
The TGA4501-SCC is 100% DC and RF tested on-wafer to ensure performance compliance.