TGA4501-SCC

Features: • 0.25 um pHEMT Technology• 23 dB Nominal Gain• 34.5 dBm Nominal P1dB• 40 dBm IMD3 Typical• Bias 6 V @ 2.1 AApplication• Satellite Ground Terminal• Point-to-Point RadioSpecifications Symbol Parameter Value Notes V+ Positive Supply Vol...

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SeekIC No. : 004518369 Detail

TGA4501-SCC: Features: • 0.25 um pHEMT Technology• 23 dB Nominal Gain• 34.5 dBm Nominal P1dB• 40 dBm IMD3 Typical• Bias 6 V @ 2.1 AApplication• Satellite Ground Terminal•...

floor Price/Ceiling Price

Part Number:
TGA4501-SCC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

• 0.25 um pHEMT Technology
• 23 dB Nominal Gain
• 34.5 dBm Nominal P1dB
• 40 dBm IMD3 Typical
• Bias 6 V @ 2.1 A



Application

• Satellite Ground Terminal
• Point-to-Point Radio



Specifications

Symbol Parameter Value Notes
V+ Positive Supply Voltage 8 V 4/
V- Negative Supply Voltage Range -5V TO 0V  
I+ Positive Supply Current(Quiescent) 3.0 A 4/
| Ig | Gate Supply Current 62 mA  
PIN Input Continuous Wave Power 24 dBm  
PD Power Dissipation 18.4 W 3/ 4/
TCH Operating Channel Temperature 150 1/ 2/
TM Mounting Temperature
(30 Seconds)
320  
TSTG Storage Temperature -65 to 150  

1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM).For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 7.4 E+6 to 4.6 E+5 hours.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.




Description

The TriQuint TGA4501-SCC is a compact 3 Watt High Power Amplifier MMIC for Ka-band applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process.

The TGA4501 provides a nominal 34.5 dBm of output power at 1 dB gain compression from 24-31 GHz with a small signal gain of 23 dB.

The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and LMDS.

The TGA4501-SCC is 100% DC and RF tested on-wafer to ensure performance compliance.




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