AMPLIFIER MMDS 2.6GHZ 10W HFET
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Symbol |
Parameter 1/ |
Value |
Notes |
Vd |
Drain Supply Voltage |
10 V |
2/ |
Vg |
Gate Supply Voltage Range |
0 V to -5 V |
|
Idq |
Drain Supply Current (Quiescent) |
4 A |
2/ |
|IG| |
Gate Supply |
39 mA |
|
PIN |
Input Continuous Wave Power |
39 dBm |
2/ |
PD |
Power Dissipation |
11.2 W |
2/ 3/ |
TCH |
Operating Channel Temperature |
175 |
4/ |
TM |
Mounting Temperature (30 Seconds) |
260 |
|
TSTG |
Storage Temperature |
-65 to 150 |
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 85 °C, the MTTF life is 2 E+8 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM).
For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
The TGA2924-SG HPA provides 12 dB of gain, 10 W of output power at 2.6 GHz and 2.5% EVM at 30 dBm output power. The device is ideally suited for high linearity, high power wireless data applications such as MMDS Point-to-Point or Point-to- Multi-Point radios. The package has a high thermal conductivity copper alloy base. Internal partial matching simplifies system board layout by requiring a minimum of external components.
Technical/Catalog Information | TGA2924-SG |
Vendor | Triquint Semiconductor Inc |
Category | RF and RFID |
Package / Case | SG-A4-2 |
Voltage - Supply | 8V |
Current - Supply | 1.2A |
Gain | 12dB |
Frequency | 2.6GHz |
RF Type | General Purpose |
Packaging | Tray |
Noise Figure | - |
P1db | 40dBm |
Test Frequency | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TGA2924 SG TGA2924SG |