RF Amplifier 6-12 GHz X-Band Ultra LNA
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Symbol | Parameter | Value | Notes |
V+ | Positive Supply Voltage | 4.5 V | 2/ |
Vg | Gate Supply Voltage Range | -2V to +1 V | |
I+ | Positive Supply Current | 50 mA | 2/ |
| Ig | | Gate Supply Current | 2 mA | |
PIN | Input Continuous Wave Power | TBD | 2/ |
PD | Power Dissipation | 0.23 W | 2/ 3/ |
TCH | Operating Channel Temperature | 110 °C | 4/ 5/ |
TM | Mounting Temperature (30 Seconds) |
175 °C | |
TSTG | Storage Temperature | -65 to 110°C |
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is greater than 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
5/ These ratings apply to each individual FET.
The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB.
The device features 30dB of gain across the band, while providing a nominal output power at P1dB gain compression of 2 dBm. Typical input and output return loss is 12 dB.
Ground is provided to the circuitry through vias to the backside metallization.
The TGA2600-EPU LNA is suitable for a variety of C and X band applications such as radar receivers, electronic counter measures,decoys, jammers, and phased array systems.
The TGA2600-EPU is 100% DC and RF tested on-wafer to ensure performance compliance.
Lead-free and RoHS compliant.
Technical/Catalog Information | TGA2600 |
Vendor | Triquint Semiconductor Inc |
Category | RF and RFID |
Function | Amplifier |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TGA2600 TGA2600 |