RF Amplifier 5-15 GHz LNA Self Biased
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Operating Frequency : | 5 GHz to 15 GHz | Noise Figure : | 1.4 dB |
Packaging : | Tray |
SYMBOL | PARAMETER 5/ | VALUE | NOTES |
Vd | Drain Voltage | [3.5 + (0.0125)(Id)] V | 2/ 3/ |
Vg | Gate Voltage Range | -1 TO +0.5 V | |
Id | Drain Current (gate biased) | 240 mA | 2/ 4/ |
½Ig½ | Gate Current | 7.04 mA | 4/ |
PIN | INPUT CONTINUOUS WAVE POWER | 21 dBm | |
PD | POWER DISSIPATION | See Note 5/ | 2/ |
TCH | OPERATING CHANNEL TEMPERATURE | 117 0C | 6/ 7/ |
TM | MOUNTING TEMPERATURE (30 SECONDS) |
320 0C | |
TSTG | STORAGE TEMPERATURE | -65 to 150 0C |
The TriQuint TGA2512 is a wideband LNA withAGC amplifier for EW, ECM, and RADARreceiver or driver amplifier applications.Offering high gain 27dB typical from 5-15GHz,the TGA2512 provides excellent noiseperformance with typical midband NF 1.4dB,while the balanced topology offers good returnloss typically 15dB.
The TGA2512 is designed for maximum easeof use. The large input FETs can handle up to21dBm input power reliably, while the build-ingain control provides 15dB of typical gaincontrol range. The part is also assembled inself-biased mode, using a single +5V supplyconnection from either side of the chip, or ingate biased mode, allowing the user to controlthe current for a particular applications.
In self-biased mode the TGA2512 offers 6dBmtypical P1dB, while in gate-biased mode thetypical P1dB is over 13dBm. The small size of2.46mm2 allows ease of compaction into Multi-Chip-Modules (MCMs).
Technical/Catalog Information | TGA2512 |
Vendor | Triquint Semiconductor Inc |
Category | RF and RFID |
Package / Case | 13-SMD |
Voltage - Supply | 5V |
Current - Supply | 90mA |
Gain | 27dB |
Frequency | 5GHz~15GHz |
RF Type | - |
Packaging | Tray |
Noise Figure | 2.3dB |
P1db | 13dBm |
Test Frequency | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TGA2512 TGA2512 |