TGA2511

Bandwidth :
Output Intercept Point :
Maximum Operating Temperature :
Mounting Style :
Packaging :
Type : Low Noise Amplifier
Operating Supply Voltage : 5 V
Noise Figure : 1.3 dB
Supply Current : 160 mA
Operating Frequency : 6 GHz to 14 GHz
Package / Case : 2.05 mm x 1.2 mm


Features:

• Typical Frequency Range: 6 - 14 GHz
• 1.3 dB Nominal Noise Figure
• 20 dB Nominal Gain
• Bias: 5 V, 160 mA Gate Bias 5 V, 80 mA Self Bias
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in)


Application

• X-Band Radar
• EW, ECM
• Point-to-Point Radio


Specifications

SYMBOL	PARAMETER	VALUE	NOTES
Vd	Drain Voltage	[3.5 + (0.0125)(Id)] V	2/ 3/
Vg	Gate Voltage Range	-1 TO +0.5 V
Id	Drain Current (gate biased)	240 mA	2/ 4/
|Ig|	Gate Current	14 mA	4/
PIN	Input Continuous Wave Power	21 dBm
PD	Power Dissipation	See note 5/	2/
TCH	Operating Channel Temperature	117	6/ 7/
TM	Mounting Temperature (30 Seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Unit for Id is A
4/ Total current for the entire MMIC.
5/ For a median life time of 1E+6 hrs, Power dissipation is limited to:PD(max) = (117 TBASE) / TJC (/W) Where TBASE is the base plate temperature, TJC is on Table IV.
6/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possibl levels.
7/ These ratings apply to each individual FET.

Description

The TriQuint TGA2511 is a wideband LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications.

Offering high gain 20dB typical from 6-14GHz, the TGA2511provides excellent noise performance with typical midband NF 1.3dB, while the balanced topology offers good return loss typically 15dB.

The TGA2511 is designed for maximum ease of use. The large input FETs can handle up to 21dBm input power reliably. The part is also assembled in self-biased mode, using a single +5V supply connection from either side of the chip, or in gate biased mode, allowing the user to control the current for a particular applications.

In self-biased mode the TGA2511 offers 6dBm typical P1dB, while in gate-biased mode the typical P1dB is over 12dBm. The small size of 2.46mm2 allows ease of compaction into Multi- Chip-Modules (MCMs).

The TGA2511 is 100% DC and RF tested onwafer to ensure performance compliance.

Lead-Free & RoHS compliant.

Parameters:

Technical/Catalog Information	TGA2511
Vendor	Triquint Semiconductor Inc
Category	RF and RFID
Function	Amplifier
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGA2511 TGA2511