TGA2510-EPU

Features: • 34 dBm Midband Psat• 26 dB Nominal Gain• 7 dB Typical Input Return Loss• 12 dB Typical Output Return Loss• 12.5 - 17 GHz Frequency Range• Directional Power Detector with Reference• 0.25m pHEMT 3MI Technology• Bias Conditions: 7.5V, 650mA&...

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SeekIC No. : 004518349 Detail

TGA2510-EPU: Features: • 34 dBm Midband Psat• 26 dB Nominal Gain• 7 dB Typical Input Return Loss• 12 dB Typical Output Return Loss• 12.5 - 17 GHz Frequency Range• Directional ...

floor Price/Ceiling Price

Part Number:
TGA2510-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

• 34 dBm Midband Psat
• 26 dB Nominal Gain
• 7 dB Typical Input Return Loss
• 12 dB Typical Output Return Loss
• 12.5 - 17 GHz Frequency Range
• Directional Power Detector with Reference
• 0.25m pHEMT 3MI Technology
• Bias Conditions: 7.5V, 650mA
• Chip Dimensions: 2.02 x 1.38 x 0.10 mm Preliminary Measured Performance (0.080 x 0.054 x 0.004 inches)



Specifications

Symbol
Parameter
Value
Notes
VD
Drain Voltage 1/ 2/
8V
1/ 2/
VG
Gate Voltage Range
-5Vto 0V
1/
ID
Drain Supply Current (Quiescent) 1300 1/ 2/
130 mA
1/ 2/
|IG|
Gate Supply Current
18 mA
PIN
Input Continuous Wave Power
24 dBm
1/ 2/
PD
Power Dissipation
6.43 W
1/2/ 3/
TCH
Operating Channel Temperature
150
4/
TM
Mounting Temperature (30 Seconds)
320
TSTG
Storage Temperature
-65 to 150
 

1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70
3/ When operated at this bias condition with a baseplate temperature of 70, the MTTF is reduced to 1.0E+6 hours
4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.




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