Features: • 34 dBm Midband Psat• 26 dB Nominal Gain• 7 dB Typical Input Return Loss• 12 dB Typical Output Return Loss• 12.5 - 17 GHz Frequency Range• Directional Power Detector with Reference• 0.25m pHEMT 3MI Technology• Bias Conditions: 7.5V, 650mA&...
TGA2510-EPU: Features: • 34 dBm Midband Psat• 26 dB Nominal Gain• 7 dB Typical Input Return Loss• 12 dB Typical Output Return Loss• 12.5 - 17 GHz Frequency Range• Directional ...
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Symbol |
Parameter |
Value |
Notes |
VD |
Drain Voltage 1/ 2/ |
8V |
1/ 2/ |
VG |
Gate Voltage Range |
-5Vto 0V |
1/ |
ID |
Drain Supply Current (Quiescent) 1300 1/ 2/ |
130 mA |
1/ 2/ |
|IG| |
Gate Supply Current |
18 mA |
|
PIN |
Input Continuous Wave Power |
24 dBm |
1/ 2/ |
PD |
Power Dissipation |
6.43 W |
1/2/ 3/ |
TCH |
Operating Channel Temperature |
150 |
4/ |
TM |
Mounting Temperature (30 Seconds) |
320 |
|
TSTG |
Storage Temperature |
-65 to 150 |
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70
3/ When operated at this bias condition with a baseplate temperature of 70, the MTTF is reduced to 1.0E+6 hours
4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.