TGA2508-EPU

Features:

• 0.50 um pHEMT Technology
• 30 dB Nominal Gain
• 30 dBm P1dB @ 15 GHz
• Bias Conditions: 7 V, 433 mA
• Chip Dimensions: 2.1 x 1.1 x 0.1 mm


Application

• VSAT Ground Terminals
• Point to Point Radio
• Military Ku Band



Specifications

SYMBOL	PARAMETER	VALUE	NOTES
V+	Positive Supply Voltage	8 V	4/
V-	Negative Supply Voltage Range	-2 to 0 V
I+	Positive Supply Current (Quiescent)	591 mA	4/
| IG |	Gate Supply Current	16 mA
PIN	Input Continuous Wave Power	17 dBm
PD	Power Dissipation	6.75 W	3/ 4/
TCH	Operating Channel Temperature	150	1/ 2/
TM	Mounting Temperature (30 Seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (T_M). For
    maximum life, it is recommended that junction temperatures be maintained at the lowest possible
    levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is
     reduced from 6.4E+7 to 1E+6 hrs.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.