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TGA2507-EPU

Features: • 12-18 GHz Bandwidth• 28 dB Nominal Gain• 20 dBm P1dB• Bias: 5,6,7 V, 80 ± 10% mA Self Bias• 0.5 um 3MI mmW pHEMT Technology• Chip Dimensions: 1.80 x 0.83 x 0.1 mm (0.071 x 0.031 x 0.004) inApplication• Point to Point Radio• Military Ku-Ba...

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SeekIC No. : 004518344 Detail

TGA2507-EPU: Features: • 12-18 GHz Bandwidth• 28 dB Nominal Gain• 20 dBm P1dB• Bias: 5,6,7 V, 80 ± 10% mA Self Bias• 0.5 um 3MI mmW pHEMT Technology• Chip Dimensions: 1.80 x 0...

TGA2507-EPU Data Sheet

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Part Number:
TGA2507-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 12-18 GHz Bandwidth
• 28 dB Nominal Gain
• 20 dBm P1dB
• Bias: 5,6,7 V, 80 ± 10% mA Self Bias
• 0.5 um 3MI mmW pHEMT Technology
• Chip Dimensions: 1.80 x 0.83 x 0.1 mm (0.071 x 0.031 x 0.004) in


Application

• Point to Point Radio
• Military Ku-Band
• Ku-Band Space
• VSAT


Specifications

SYMBOL PARAMETER VALUE NOTES
V+ Positive Supply Voltage 8 V 2/
I+ Positive Supply Current 114 mA 2/
PIN Input Continuous Wave Power 20 dBm  
PD Power Dissipation 0.91 W 2/ 3/
TCH Operating Channel Temperature 150 4/ 5/
TM Mounting Temperature (30 Seconds) 320  
TSTG Storage Temperature -65 to 150  
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70° C, the median life is 1.8 E+6 hrs.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings apply to each individual FET.


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