Features: • 12-18 GHz Bandwidth• 17 dB Nominal Gain• > 14 dBm P1dB• Bias: 5,6,7 V, 40 ± 10% mA Self Bias• 0.5 um 3MI mmW pHEMT Technology• Chip Dimensions: 1.19 x 0.83 x 0.1 mm (0.047 x 0.031 x 0.004) inApplication• Point to Point Radio• Military ...
TGA2506-EPU: Features: • 12-18 GHz Bandwidth• 17 dB Nominal Gain• > 14 dBm P1dB• Bias: 5,6,7 V, 40 ± 10% mA Self Bias• 0.5 um 3MI mmW pHEMT Technology• Chip Dimensions: 1.1...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
Value |
Notes |
V+ |
PositiveSupply Voltage |
8 V |
2/ |
I+ |
Positive Supply Current |
57mA |
2/ |
PIN |
Input Continuous Wave Power |
20dBm |
|
PD |
Power Dissipation |
0.45 |
2/ 3/ |
TCH |
Operating Channel Temperature |
150 |
4/5/ |
TM |
Mounting Temperature (30 Seconds) |
320 |
|
TSTG |
Storage Temperature |
-65 to 150 |
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced to 1E+7 hrs.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D.
5/ These ratings apply to each individual FET.