TGA2506-EPU

Features: • 12-18 GHz Bandwidth• 17 dB Nominal Gain• > 14 dBm P1dB• Bias: 5,6,7 V, 40 ± 10% mA Self Bias• 0.5 um 3MI mmW pHEMT Technology• Chip Dimensions: 1.19 x 0.83 x 0.1 mm (0.047 x 0.031 x 0.004) inApplication• Point to Point Radio• Military ...

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SeekIC No. : 004518343 Detail

TGA2506-EPU: Features: • 12-18 GHz Bandwidth• 17 dB Nominal Gain• > 14 dBm P1dB• Bias: 5,6,7 V, 40 ± 10% mA Self Bias• 0.5 um 3MI mmW pHEMT Technology• Chip Dimensions: 1.1...

floor Price/Ceiling Price

Part Number:
TGA2506-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

• 12-18 GHz Bandwidth
• 17 dB Nominal Gain
• > 14 dBm P1dB
• Bias: 5,6,7 V, 40 ± 10% mA Self Bias
• 0.5 um 3MI mmW pHEMT Technology
• Chip Dimensions: 1.19 x 0.83 x 0.1 mm
                               (0.047 x 0.031 x 0.004) in



Application

• Point to Point Radio
• Military Ku-Band
• Space Ku-Band
• VSAT



Specifications

Symbol
Parameter
Value
Notes
V+
PositiveSupply Voltage
8 V
2/
I+
Positive Supply Current
57mA
2/
PIN
Input Continuous Wave Power
20dBm
PD
Power Dissipation
0.45
2/ 3/
TCH
Operating Channel Temperature
150
4/5/
TM
Mounting Temperature (30 Seconds)
320
TSTG
Storage Temperature
-65 to 150
 

1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced to 1E+7 hrs.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D.
5/ These ratings apply to each individual FET.




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