TGA2503-EPU Selling Leads, Price trend, TGA2503-EPU DataSheet download, circuit diagram from SeekIC.com

Features: • 33 dBm Midband Pout• 32 dB Nominal Gain• 10 dB Typical Return Loss• Built-in Directional Power Detector with Reference• 0.5m pHEMT, 3MI Technology• Bias Conditions: 7V, 680mA• Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils)Application...

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SeekIC No. : 004518342 Detail

TGA2503-EPU: Features: • 33 dBm Midband Pout• 32 dB Nominal Gain• 10 dB Typical Return Loss• Built-in Directional Power Detector with Reference• 0.5m pHEMT, 3MI Technology• Bi...

TGA2503-EPU Data Sheet

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Part Number:: TGA2503-EPU
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/12

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Product Details

Description

Features:

• 33 dBm Midband Pout
• 32 dB Nominal Gain
• 10 dB Typical Return Loss
• Built-in Directional Power Detector with Reference
• 0.5m pHEMT, 3MI Technology
• Bias Conditions: 7V, 680mA
• Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils)

Application

• VSAT
• Point-to-Point

Specifications

Symbol	Parameter 1/	Value	Notes
V⁺	Positive Supply Voltage	8 V	2/
V^-	Negative Supply Voltage Range	-5V TO 0V
I⁺	Positive Supply Current	TBD	2/
\| I_G \|	Gate Supply Current	18 mA
P_IN	Input Continuous Wave Power	21.4 dBm	2/
P_D	Power Dissipation	6.83 W	2/ 3/
T_CH	Operating Channel Temperature	150	4/ 5/
T_M	Mounting Temperature (30 Seconds)	320
T_STG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70, the median life is reduced from 8.9E+6 to 1E+6.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.

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TGA2503-EPU

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