TGA1328-SCC

Notes:
1/ Assure that the combination of Vd and Id does not exceed the maximum power dissipation rating.
2/ When operated at this bias condition with a base plate temperature of 70, the median life is reduced from >1E8 to 2.4E6 hours.
3/ Assure that Vctl never exceeds Vd during bias up and down sequences. Also, assure that Vctl never exceeds 1.5V during normal operation.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings represent the maximum operable values for the device.

The TriQuint TGA1328-SCC is a medium power wideband AGC amplifier that typically provides 12dB saturated gain with 6dB AGC range. Typical input and output return loss is >10dB. Typical Noise Figure is 2.5dB at 3GHz. Minimum saturated output power is 25dBm. Small signal BW is near 14GHz with saturated power performance to 18GHz. RF ports are DC coupled enabling the user to customize system corner frequencies.

The TGA1328-SCC is an excellent choice for 9.9, 10.7, and 12.5Gb/s NRZ applications driving a Lithium Niobate Optical Modulator with electrical Non-Return-to-Zero (NRZ) data. In addition it may be used as a receive AGC amplifier.

Drain bias may be applied thru the on-chip drain termination resistor for low drive applications or thru the RF output port for high drive applications.

The TGA1328-SCC requires off-chip decoupling and blocking components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The TGA1328SCC is available in chip form or assembled into a surface mount package (see the TGA8652-EPU data sheet for more information on the SMT package).