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TGA1319C-EPU

Features: • 0.15um pHEMT Technology• 16-30 GHz Frequency Range• 2.25 dB Nominal Noise Figure midband• 21 dB Nominal Gain• 14 dBm Pout• Bias 5V, 60 mA with -0.5V < Vg < +0.5VApplication• Point-to-Point Radio• Point-to-Multipoint CommunicationsSp...

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SeekIC No. : 004518340 Detail

TGA1319C-EPU: Features: • 0.15um pHEMT Technology• 16-30 GHz Frequency Range• 2.25 dB Nominal Noise Figure midband• 21 dB Nominal Gain• 14 dBm Pout• Bias 5V, 60 mA with -0.5V &...

TGA1319C-EPU Data Sheet

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Part Number:
TGA1319C-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.15um pHEMT Technology
• 16-30 GHz Frequency Range
• 2.25 dB Nominal Noise Figure midband
• 21 dB Nominal Gain
• 14 dBm Pout
• Bias 5V, 60 mA with -0.5V < Vg < +0.5V


Application

• Point-to-Point Radio
• Point-to-Multipoint Communications


Specifications

SYMBOL PARAMETER 4/ VALUE NOTES
V+ POSITIVE SUPPLY VOLTAGE 9 V  
I+ POSITIVE SUPPLY CURRENT 80 mA 1/
I- NEGATIVE GATE CURRENT 5.28 mA  
PIN INPUT CONTINUOUS WAVE POWER 18 dBm  
PD POWER DISSIPATION .72 W  
TCH OPERATING CHANNEL TEMPERATURE 150 2/ 3/
TM MOUNTING TEMPERATURE
(30 SECONDS)		 320  
TSTG STORAGE TEMPERATURE -65 to 150  

DC PROBE TESTS
(TA = 25 °C ± 5°C)
1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ These ratings represent the maximum operable values for the device.




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