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TGA1319B-EPU

Features: • 0.15um pHEMT Technology• 21-27 GHz Frequency Range• 1.75 dB Nominal Noise Figure• 19 dB Nominal Gain• 8dBm Pout• 3V, 45 mA Self -biasedApplication• Point-to-Point Radio• Point-to-Multipoint CommunicationsSpecifications SYMBOL PARAME...

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TGA1319B-EPU: Features: • 0.15um pHEMT Technology• 21-27 GHz Frequency Range• 1.75 dB Nominal Noise Figure• 19 dB Nominal Gain• 8dBm Pout• 3V, 45 mA Self -biasedApplicationR...

TGA1319B-EPU Data Sheet

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Part Number:
TGA1319B-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

• 0.15um pHEMT Technology
• 21-27 GHz Frequency Range
• 1.75 dB Nominal Noise Figure
• 19 dB Nominal Gain
• 8dBm Pout
• 3V, 45 mA Self -biased


Application

• Point-to-Point Radio
• Point-to-Multipoint Communications


Specifications

SYMBOL PARAMETER 4/ VALUE NOTES
V+ POSITIVE SUPPLY VOLTAGE 5 V  
I+ POSITIVE SUPPLY CURRENT 60 mA 1/
I- NEGATIVE GATE CURRENT 5.28 mA  
PIN INPUT CONTINUOUS WAVE POWER 15 dBm  
PD POWER DISSIPATION .3 W  
TCH OPERATING CHANNEL TEMPERATURE 150 2/ 3/
TM MOUNTING TEMPERATURE
(30 SECONDS)		 320  
TSTG STORAGE TEMPERATURE -65 to 150  
1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ These ratings represent the maximum operable values for the device.


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