Features: • 0.25 um pHEMT Technology• 16 dB Nominal Gain• 29 dBm Nominal P1dB• 36dBm OTOI typical at 28GHz• Nominal Input/Output RL < -10 dB• Bias 6 - 7V @ 630 mAApplication• Point-to-Point Radio• Point-to-Multipoint Communications• Ka Band ...
TGA1172-SCC: Features: • 0.25 um pHEMT Technology• 16 dB Nominal Gain• 29 dBm Nominal P1dB• 36dBm OTOI typical at 28GHz• Nominal Input/Output RL < -10 dB• Bias 6 - 7V @ 630...
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Features: • HFET Technology• 12.5 -15.5 GHz Frequency Range• > 3W Nominal Pou...
Features: • 0.25um pHEMT Technology• 36-40 GHz Frequency Range• 22 dBm Nominal P...
SYMBOL | PARAMETER 4/ |
VALUE |
NOTES |
V+ | POSITIVE SUPPLY VOLTAGE |
8 V |
|
I+ | POSITIVE SUPPLY CURRENT |
840 mA |
1/ |
I- | NEGATIVE SUPPLY CURRENT |
35.2 mA |
1/ |
PIN | INPUT CONTINUOUS WAVE POWER |
23 dBm |
|
PD | POWER DISSIPATION |
5.0 W |
|
TCH | OPERATING CHANNEL TEMPERATURE |
150 |
2/ 3/ |
TM | MOUNTING TEMPERATURE (30 SECONDS) |
320 |
|
TSTG | STORAGE TEMPERATURE |
-65 to 150 |
The TriQuint TGA1172-SCC is a three stage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process.
The TGA1172 is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS and Ka band satellite ground terminals. The three stage design consists of a 600um input stage driving a 2 x 600um interstage followed by a 4 x 600um output stage.
The TGA1172 provides 29 dBm nominal output power at 1dB compression across 27-32GHz. Typical small signal gain is 16 dB with typical Input/Output Return Loss of <-10dB. The TGA1172 requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.