Features: • 0.25 um pHEMT Technology• 14 dB Nominal Gain at 23GHz• 30 dBm Nominal P1dB• 38dBm OTOI typical• Typical 15dB Input/Output RL• Bias 6 - 7V @ 540 mA• On-chip power detector diodeApplication• Point-to-Point Radio• Point-to-Multipoint C...
TGA1135B: Features: • 0.25 um pHEMT Technology• 14 dB Nominal Gain at 23GHz• 30 dBm Nominal P1dB• 38dBm OTOI typical• Typical 15dB Input/Output RL• Bias 6 - 7V @ 540 mAR...
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Features: • HFET Technology• 12.5 -15.5 GHz Frequency Range• > 3W Nominal Pou...
Features: • 0.25um pHEMT Technology• 36-40 GHz Frequency Range• 22 dBm Nominal P...