TGA1135B-SCC

RF Amplifier 18-27GHz K Band HPA

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SeekIC No. : 00611658 Detail

TGA1135B-SCC: RF Amplifier 18-27GHz K Band HPA

floor Price/Ceiling Price

US $ 21.4~28.72 / Piece | Get Latest Price
Part Number:
TGA1135B-SCC
Mfg:
TriQuint Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~50
  • 50~100
  • 100~250
  • Unit Price
  • $28.72
  • $23.26
  • $21.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Quick Details

Type : Power Amplifier Operating Frequency : 18 GHz to 27 GHz
Operating Supply Voltage : 13 V Supply Current : 720 mA
Package / Case : 2.641 mm x 1.48 mm    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Maximum Operating Temperature :
Mounting Style :
Packaging :
Type : Power Amplifier
Operating Frequency : 18 GHz to 27 GHz
Operating Supply Voltage : 13 V
Supply Current : 720 mA
Package / Case : 2.641 mm x 1.48 mm


Features:

• 0.25 um pHEMT Technology
• 14 dB Nominal Gain at 23GHz
• 29 dBm Nominal P1dB
• 37dBm OTOI typical
• Typical 15dB Input/Output RL
• Bias 6 - 7V @ 480 mA
• On-chip power detector diode





Application

• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com



Specifications

SYMBOL
PARAMETER 4/
VALUE
NOTES
V+
POSITIVE SUPPLY VOLTAGE
8V
I+
POSITIVE SUPPLY CURRENT
720 mA
1/
I-
NEGATIVE SUPPLY CURRENT
28.2 mA
PIN
INPUT CONTINUOUS WAVE POWER
23 dBm
PD
POWER DISSIPATION
5.0 W
TCH
OPERATING CHANNEL TEMPERATURE
150
2/ 3/
TM
MOUNTING TEMPERATURE
(30 SECONDS)
320
TSTG
STORAGE TEMPERATURE
-65 to 150

1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life,it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ These ratings represent the maximum operable values for the device.






Description

The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA11135B is designed to support a variety of millimeter wave applications including point-topoint digital radio and LMDS/LMCS.

The balanced configuration two stage design consists of a pair of 600um input devices driving a 4 x 600um output stage. Power combining is achieved with on-chip Lange couplers.

The TGA1135B-SCC provides 29 dBm nominal output power at 1dB compression across 18 - 27GHz. Typical small signal gain is 14 dB across the band. Input and output return loss is typically -15dB.

An on-chip power detector and reference diode may be used for power monitoring/control and bias control loops.

The TGA1135B-SCC requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.






Parameters:

Technical/Catalog InformationTGA1135B-SCC
VendorTriquint Semiconductor Inc
CategoryRF and RFID
FunctionAmplifier
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TGA1135B SCC
TGA1135BSCC



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