DescriptionThe TG2205F is designed as one kind of TOSHIBA MOS type integrated circuit that can be used in RF SPDT switch application. Features of this device are:(1)low insertion loss: Loss = 0.5 dB (typ.);(2)hight isolation: ISL = 25 dB (typ.);(3)control voltage: 0 V / 3 V. The absolute maximum ...
TG2205F: DescriptionThe TG2205F is designed as one kind of TOSHIBA MOS type integrated circuit that can be used in RF SPDT switch application. Features of this device are:(1)low insertion loss: Loss = 0.5 dB...
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The TG2205F is designed as one kind of TOSHIBA MOS type integrated circuit that can be used in RF SPDT switch application. Features of this device are:(1)low insertion loss: Loss = 0.5 dB (typ.);(2)hight isolation: ISL = 25 dB (typ.);(3)control voltage: 0 V / 3 V.
The absolute maximum ratings of the TG2205F can be summarized as:(1)supply voltage: 5 V;(2)control voltage: 5 V;(3)input power: 1 W;(4)operating temperature range: -40 to +85 ;(5)storage temperature range: -55 to +125 .
The electrical characteristics of the TG2205F can be summarized as:(1)insertion loss: 0.5 to 1.0 dB;(2)isolation: 20 to 25 dB;(3)switching time: 0.01 us;(4)supply current: 0.01 mA;(5)control current: 0.01 mA;(6)output power at 1 dB gain compression: 24 dBmW;(7)adjacent channel leakage power ratio: -60 dB. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .