TG2205F

DescriptionThe TG2205F is designed as one kind of TOSHIBA MOS type integrated circuit that can be used in RF SPDT switch application. Features of this device are:(1)low insertion loss: Loss = 0.5 dB (typ.);(2)hight isolation: ISL = 25 dB (typ.);(3)control voltage: 0 V / 3 V. The absolute maximum ...

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SeekIC No. : 004518296 Detail

TG2205F: DescriptionThe TG2205F is designed as one kind of TOSHIBA MOS type integrated circuit that can be used in RF SPDT switch application. Features of this device are:(1)low insertion loss: Loss = 0.5 dB...

floor Price/Ceiling Price

Part Number:
TG2205F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Description

The TG2205F is designed as one kind of TOSHIBA MOS type integrated circuit that can be used in RF SPDT switch application. Features of this device are:(1)low insertion loss: Loss = 0.5 dB (typ.);(2)hight isolation: ISL = 25 dB (typ.);(3)control voltage: 0 V / 3 V.

The absolute maximum ratings of the TG2205F can be summarized as:(1)supply voltage: 5 V;(2)control voltage: 5 V;(3)input power: 1 W;(4)operating temperature range: -40 to +85 ;(5)storage temperature range: -55 to +125 .

The electrical characteristics of the TG2205F can be summarized as:(1)insertion loss: 0.5 to 1.0 dB;(2)isolation: 20 to 25 dB;(3)switching time: 0.01 us;(4)supply current: 0.01 mA;(5)control current: 0.01 mA;(6)output power at 1 dB gain compression: 24 dBmW;(7)adjacent channel leakage power ratio: -60 dB. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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