TG2000F

The TG2000F is designed as one kind of TOSHIBA MOS type integrated circuit that can be used in TV tuner, UHF RF amplifier applications. Features of this device are:(1)on account of this device build in bias circuit, cut down number of articles;(2)low noise figure: NF = 1.5 dB (typ.);(3)operating voltage: VDD = 4 to 5 V.

The absolute maximum ratings of the TG2000F can be summarized as:(1)supply voltage: 6 V;(2)gate 2-drain voltage: -6 V;(3)gate 2-source voltage: -4 V;(4)gate 2 current: 1 mA;(5)drain power dissipation: 150 mW;(6)operating temperature range: -40 to +85 ;(7)storage temperature range: -55 to +125 .

The electrical characteristics of the TG2000F can be summarized as:(1)gate 2 leakage current: -4 uA;(2)drain current: 4 to 16 mA;(3)gate 2-source cut-off voltage: -0.75 to -1.3 V;(4)forward transfer admittance: 12 mS;(5)drain current: 11 mA;(6)power gain: 15 to 19 dB;(7)noise figure: 1.5 dB to 2.5 dB. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .