TFK5070D

TFK5070D is a kind of NPN silicon darlington power transistor. The typical applications include motor-control (380 V-mains), UPS (uninterruptible power supplies), high power SMPS (1000 W) and battery chargers.

There are some features of TFK5070D as follows. First is high reverse voltage. The second is short switching times. Then is very fast C-E-free-wheel diode. Next is base 1 and base 2 connectable. The fifth is triple diffusion technique. The last one is glass passivation.

What comes next is about the absolute maximum ratings of TFK5070D. The VCEO (collector-emitter voltage) is 700 V. The VCES (collector-emitter voltage) is 1000 V. The VEBO (emitter-base voltage) is 7 V. The IC (collector current) is 30 A. The ICM (collector peak current) is 50 A. The IB (base current) is 4 A. The IBM (base peak current) is 8 A. The Ptot (total power dissipation) is 150 W at Tcase=25. The Tj (junction temperature) is 150. The Tstg (storage temperature) is from -40 to +150. The Vis (insulation voltage) is 2500 V. Then is about the maximum thermal resistances. The RthJC (junction case) is 0.83 K/W for power transistor and 1.8 K/W for free-wheel diode.