TFK3080D

The TFK3080D is designed as one kind of NPN silicon tripleton power transistor that can be used in some points of applications:(1)motor-control (380 V-mains);(2)UPS (uninterruption power supplies);(3)high power SMPS (>/= 1000 W);(4)battery charges;(5)welding equipments;(6)inductive heating equipment. Features of the TFK3080D are:(1)high reverse voltage;(2)short switching times;(3)very fast C-E-free-wheel diode;(4)base 1 and base 2 connectable;(5)triple diffusion technique;(6)glass passivation.

The absolute maximum ratings of the TFK3080D can be summarized as:(1)collector-emitter voltage: 1000 V;(2)emitter-base voltage: 8 V;(3)collector current: 30 A;(4)collector peak current: 60 A;(5)base current: 2 A;(6)base peak current: 4 A;(7)total power dissipation: 275 W;(8)junction temperature: 150 ;(9)storage temperature range: -40 to +150 ;(10)insulation voltage: 2500 V;(11)junction case power transistor: 0.45 K/W;(12)junction case free-wheel diode: 1.5 K/W.

The electrical characteristics of this TFK3080D can be summarized as:(1)collector cut-off current: 1.0 mA;(2)emitter cur-off current: 200 mA;(3)collector-emitter breakdown voltage: 1000 V;(4)emitter-base breakdown voltage: 8 V;(5)collector saturation voltage: 2.5 V;(6)base saturation voltage: 3.5 V. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .