Photodetector Transistors Ambient Light Sensor
TEPT5600: Photodetector Transistors Ambient Light Sensor
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Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 50 nA |
Package / Case : | T-1 3/4 |
SYMBOL | PARAMETER | TEST CONDITION | RATING | UNIT |
VCBO | Collector to base voltage |
6 |
V | |
VCEO | Collector to emitter voltage |
1.5 |
V | |
IC | Collector current | 20 | mA | |
PV | Power dissipation | Tamb 55 °C | 100 | mW |
Tj | Junction temperature |
100 | ||
Tamb | Operating temperature range | - 40 to + 85 | ||
Tstg | Storage temperature range | - 40 to + 100 | ||
Tsd | Soldering temperature | t 3 s, 2 mm distance to package | 260 | |
RthJA | Thermal resistance junction/ambient | J-STD-051, soldered on PCB | 230 | K/W |
TEPT5600 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm.