Photodetector Transistors 5V 100mW 850nm
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Optical Sensor Development Tools Development Kit for TEMT6000X01
Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 200 nA |
Package / Case : | SMD |
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
Emitter collector voltage |
VECO |
5 |
V | |
Collector current |
IC |
50 |
mA | |
Collector peak current | tp/T = 0.5, tp 10 ms |
ICM |
100 |
mA |
Power dissipation | Tamb 55 |
PV |
100 |
mW |
Junction temperature |
Tj |
100 |
||
Operating temperature range |
Tamb |
- 40 to + 85 |
||
Storage temperature range |
Tstg |
- 40 to + 100 |
||
Soldering temperature | Acc. reflow solder profile fig. 8 |
Tsd |
< 260 |
|
Thermal resistance junction/ambient | Soldered on PCB with pad dimensions: 4 mm x 4 mm |
RthJA |
400 |
K/W |