TEMD1030

Product : PIN Photodiodes
Reverse Voltage : 60 V
Peak Wavelength : 940 nm
Maximum Dark Current : 10 nA
Rise Time : 4 ns
Fall Time : 4 ns
Half Intensity Angle Degrees : 15 deg
Package / Case : SMD-2


Features:

• Extra fast response times
• Radiant sensitive area A = 0.25 mm²
• Daylight filter
• Versatile terminal configurations
• Package matched to IR Emitter series TSMF1000 and TSML1000
• Angle of half sensitivity = ± 15°




Application

·High speed detector for SMT
·IR Detector for Daylight application




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	60	V
Power Dissipation	Tamb25	PV	75	mW
Junction Temperature		Tj	100
Storage Temperature Range		Tstg	- 40 to + 100
Operating Temperature Range		Tstg	- 40 to + 85
Soldering Temperature	t 5 s	Tsd	<260

Description

TEMD1030 series are high speed silicon PIN photodiodes molded in SMT package with dome lens.

Due to integrated Daylight filter devices are sensitive for IR radiation only.

High on axis sensitivity is provided by a viewing angle of ± 15°.

Silicon PIN Photodiode, RoHS Compliant




Parameters:

Technical/Catalog Information	TEMD1030
Vendor	Semiconductors/Vishay
Category	Sensors, Sensor Evaluation Kits
Other Names	TEMD1030 TEMD1030 751 1045 1 ND 75110451ND 751-1045-1